Investigation of phase transition in ferroelectric Pb0.70Sr0.30TiO3 thin films

Ferroelectric phase transition in strained multiferroic (Bi0.9La0.1)2NiMnO6 thin films

Ferroelectric transition in compressively strained SrTiO3 thin films

Amit Verma, Santosh Raghavan, Susanne Stemmer, and Debdeep Jena Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USA School of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14853, USA Materials Department, University of California, Santa Barbara, California 93106, USA Department of Materials Science and Engineering, Cornell U...

Dielectric properties of ferroelectric thin films with surface transition layers.

By taking into account surface transition layers (STL), the dielectric properties of ferroelectric thin films described by the transverse Ising model are discussed in the framework of the mean field approximation. Functions of the intra-layer and inter-layer couplings are introduced to characterize STL, which makes the model more realistic compared to previous treatment of surface layers using ...

Annealing temperature effect on nanostructure and phase transition of Copper Oxide thin films

This paper addresses the annealing temperature effect on nanostructure and phase transition of copper oxide thin films, deposited by PVD method on glass substrate (at 110 nm thickness) and post annealed at different temperatures (200-400°C) with a flow of 1 cm3s-1 Oxygen. The X-ray diffraction (XRD) was employed for crystallographic and phase analyses, while atomic force m...

Simulation of Ferroelectric Thin Films

The hysteresis properties of ferroelectric thin films open an elegant and promising way to build nonvolatile memory cells. Our basic goal is to set up a tool which is able to reproduce the macroscopic behavior of the devices by calculating current, voltage and charge at the contacts correctly. Our tool, MINIMOS-NT, provides a rigorous approach to describe the static hysteresis properties of fer...